New high‐luminance thin‐film electroluminescent devices using ZnGa 2 O 4  phosphor emitting layers | Zendy

Minami Tadatsugu | Zendy; Takata Shinzo | Zendy; Kuroi Yoshihiro | Zendy; Maeno Takanori | Zendy

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New high‐luminance thin‐film electroluminescent devices using ZnGa 2 O 4 phosphor emitting layers

Author(s) -

Minami Tadatsugu,

Takata Shinzo,

Kuroi Yoshihiro,

Maeno Takanori

Publication year - 1996

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1889/1.1984989

Subject(s) - phosphor , materials science , electroluminescence , thin film , optoelectronics , thulium , luminance , doping , optics , nanotechnology , layer (electronics) , physics

— A new high‐luminance thin‐film electroluminescent (TFEL) device using a zinc gallate phosphor in conjunction with a thick barium titanate ceramic insulator has been developed. A high luminance was attained in TFEL devices using the ZnGa 2 O 4 phosphor thin films post‐annealed at 1020°C in argon‐gas atmosphere. Luminances as high as 630 and 200 cd/m 2 for green emission were obtained for a manganese‐activated zinc gallate (ZnGa 2 O 4 : Mn) TFEL device driven by a sinusoidal voltage at 1 kHz and 60 Hz, respectively. Multicolor emission was also realized by TFEL devices using europium‐, terbium‐, thulium‐, or cerium‐activated ZnGa 2 O 4 phosphors.

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