Premium
New high‐luminance thin‐film electroluminescent devices using ZnGa 2 O 4 phosphor emitting layers
Author(s) -
Minami Tadatsugu,
Takata Shinzo,
Kuroi Yoshihiro,
Maeno Takanori
Publication year - 1996
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1984989
Subject(s) - phosphor , materials science , electroluminescence , thin film , optoelectronics , thulium , luminance , doping , optics , nanotechnology , layer (electronics) , physics
— A new high‐luminance thin‐film electroluminescent (TFEL) device using a zinc gallate phosphor in conjunction with a thick barium titanate ceramic insulator has been developed. A high luminance was attained in TFEL devices using the ZnGa 2 O 4 phosphor thin films post‐annealed at 1020°C in argon‐gas atmosphere. Luminances as high as 630 and 200 cd/m 2 for green emission were obtained for a manganese‐activated zinc gallate (ZnGa 2 O 4 : Mn) TFEL device driven by a sinusoidal voltage at 1 kHz and 60 Hz, respectively. Multicolor emission was also realized by TFEL devices using europium‐, terbium‐, thulium‐, or cerium‐activated ZnGa 2 O 4 phosphors.