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Electron‐stimulated surface reactions between residual vacuum gas and ZnS field‐emission‐display phosphors
Author(s) -
Sebastian J.,
Jones S.,
Trottier T.,
Swart H.,
Holloway P.
Publication year - 1995
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1984956
Subject(s) - auger electron spectroscopy , phosphor , hydrogen , torr , materials science , oxygen , dissociation (chemistry) , field electron emission , analytical chemistry (journal) , electron , electron spectroscopy , cathode ray , atomic physics , chemistry , optoelectronics , organic chemistry , chromatography , quantum mechanics , nuclear physics , thermodynamics , physics
— Phosphor films of ZnS on Si (100) have been subject to electron bombardment (2 KeV) over a range of pressures from 1 × 10 −6 to 1 × 10 −9 Torr. Various gases including hydrogen and oxygen were introduced into the ambient during bombardment, in order to assess their effects on surface modification. Auger electron spectroscopy data indicate that in the presence of oxygen and hydrogen, sulfur was depleted from the surface during electron bombardment. The postulated mechanism for this displacement is electron‐beam dissociation of molecular species to atomic hydrogen and oxygen, followed by a surface reaction forming high‐vapor‐pressure sulfur compounds ( e.g. SO x and H 2 S).