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Silicon field‐emitter arrays for cathodoluminescent flat‐panel displays
Author(s) -
Gray H. F.,
Sune C. T.,
Jones G. W.
Publication year - 1993
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1984850
Subject(s) - common emitter , materials science , optoelectronics , flat panel display , etching (microfabrication) , field emission display , silicon , flat panel , thermal oxidation , voltage , cathodoluminescence , thermal , field electron emission , optics , nanotechnology , electrical engineering , electron , luminescence , physics , engineering , layer (electronics) , quantum mechanics , meteorology
— Cathodoluminescent flat‐panel displays can be made with field‐emitter arrays (FEAs). Using orientation‐dependent etching and a linear thermal‐oxidation process, uniform and reproducible FEAs which yield more than 10 μA per tip with less than 140‐Vdc extraction voltages have been fabricated. Modulation voltages are in the 40‐V region. These FEAs can be the basis for a simple and inexpensive cathodoluminescent flat‐panel display.