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Noncrossing TFT matrix with reduced dc level shift and crosstalk
Author(s) -
Yanai Kenichi,
Tanaka Tsutomu,
Hoshiya Takayuki,
Kakehi Tatsuya,
Ohgata Kohji,
Oki Kenichi,
Okabe Masahiro
Publication year - 1993
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1984840
Subject(s) - crosstalk , voltage , thin film transistor , capacitor , computer science , pixel , materials science , optoelectronics , electrical engineering , physics , optics , engineering , nanotechnology , layer (electronics)
— A noncrossing TFT matrix and drive scheme that eliminates dc level‐shift differences among data and reduces crosstalk without a storage capacitor is proposed. To compensate for the dc level shift, an extra TFT is added to each pixel. By applying a compensation pulse to the TFT, the dc level‐shift differences among data are reduced to less than 0.01 V. The compensating TFT also provides redundancy. The peak‐to‐peak data voltage amplitude is lowered by changing the reference voltage according to the LC cell voltage polarity. By using the lowered data voltage and the shielded reference bus structure, crosstalk is reduced sufficiently to allow for 64 gray levels.