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Fabrication of 10‐in.‐diagonal 16‐gray‐level TFT‐LCDs by novel processing technologies
Author(s) -
Kobayashi Kazuhiro,
Hayama Masahiro,
Nakagawa Naoki,
Ishibashi Tatsuo,
Maejima Taro,
Yamazaki Teruhiko
Publication year - 1993
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1984838
Subject(s) - thin film transistor , materials science , electrode , optoelectronics , fabrication , photoresist , diagonal , etching (microfabrication) , computer science , electrical engineering , nanotechnology , engineering , medicine , chemistry , alternative medicine , geometry , layer (electronics) , pathology , mathematics
Abstract— New processing technologies for large‐area high‐resolution TFT‐LCDs have been developed. A taper‐etching technology for Cr gate electrodes with a resistivity of 18 μΩ/cm was realized. The technology allows control of the taper angle down to as low as 2°. The breakdown voltage between the gate electrodes and the source‐drain electrodes was improved from 140 V to over 400 V. A new end‐point‐detection method using N 2 plasma emission for the photoresist stripping process has been developed. The method decreases the contact resistance and improves the transfer characteristics of TFTs. These processing technologies make possible the realization of 10‐in.‐diagonal TFT‐LCDs with 16 gray levels.