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High‐efficiency p‐i‐n organic light‐emitting diodes with long lifetime
Author(s) -
Wellmann Philipp,
Hofmann Michael,
Zeika Olaf,
Werner Ansgar,
Birnstock Jan,
Meerheim Rico,
He Gufeng,
Walzer Karsten,
Pfeiffer Martin,
Leo Karl
Publication year - 2005
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1927730
Subject(s) - citation , computer science , library science
— High‐performance organic light‐emitting diodes (OLEDs) are promoting future applications of solid‐state lighting and flat‐panel displays. We demonstrate here that the performance demands for OLEDs are met by the PIN (p‐doped hole‐transport layer/intrinsically conductive emission layer/n‐doped electron‐transport layer) approach. This approach enables high current efficiency, low driving voltage, as well as long OLED lifetimes. Data on very‐high‐efficiency diodes (power efficiencies exceeding 70 lm/W) incorporating a double‐emission layer, comprised of two bipolar layers doped with tris(phenylpyridine)iridium [Ir(ppy) 3 ], into the PIN architecture are shown. Lifetimes of more than 220,000 hours at a brightness of 150 cd/m 2 are reported for a red PIN diode. The PIN approach further allows the integration of highly efficient top‐emitting diodes on a wide range of substrates. This is an important factor, especially for display applications where the compatibility of PIN OLEDs with various kinds of substrates is a key advantage. The PIN concept is very compatible with different backplanes, including passive‐matrix substrates as well as active‐matrix substrates on low‐temperature polysilicon (LTPS) or, in particular, amorphous silicon (a‐Si).