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A high‐aperture‐ratio and low‐crosstalk pixel structure design for in‐plane‐switching‐mode TFT‐LCDs
Author(s) -
Lin JiunnShyong,
Yang KeiHsiung,
Chen ShuHsia
Publication year - 2004
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1847760
Subject(s) - crosstalk , brightness , aperture (computer memory) , pixel , materials science , liquid crystal display , optics , thin film transistor , capacitive coupling , contrast ratio , optoelectronics , computer science , electrical engineering , physics , voltage , engineering , layer (electronics) , acoustics , composite material
— The TFT‐LCD market is growing rapidly, and the replacement of CRT TV by LCD TV requires the implementation of LC modes with wide viewing angles and high brightness. The IPS mode is an excellent technology to realize wide viewing angles, but it has a low aperture ratio that has now been improved by Advanced Super‐IPS (AS‐IPS). In this paper, we propose a novel pixel structure design that not only increases the aperture ratio but also reduces the crosstalk. We have improved the current AS‐IPS aperture ratio by 1.25 times and effectively reduced the capacitive coupling ratio from 1.2% to 0.05%.

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