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PECVD films for low‐temperature poly‐Si TFT‐LCD applications
Author(s) -
Takehara T.,
Harshbarger W. R.,
Tsai C. C.,
Toet D.,
Sigmon T.
Publication year - 2001
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1844663
Subject(s) - thin film transistor , materials science , polycrystalline silicon , plasma enhanced chemical vapor deposition , excimer laser , crystallization , amorphous solid , active matrix , silicon , optoelectronics , amorphous silicon , fabrication , crystallite , thin film , laser , chemical engineering , nanotechnology , crystalline silicon , optics , crystallography , layer (electronics) , chemistry , medicine , physics , alternative medicine , engineering , pathology , metallurgy
— Low‐temperature polycrystalline‐silicon (poly‐Si) thin‐film‐transistor (TFT) processes, based on PECVD amorphous‐silicon (a‐Si:H) precursor films and excimer‐laser crystallization, have been developed for application in the fabrication of active‐matrix liquid‐crystal‐displays (AMLCDs). The optimum process for depositing the precursor films has been identified. The relationship between excimer‐laser crystallization and poly‐Si film morphology has also been studied. Using these techniques, poly‐Si TFTs with a mobility of 275 cm 2 /V‐sec and on/off ratios of 1 × 10 7 have been fabricated.