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Recent developments in large‐area photomasks for display applications
Author(s) -
Åman Johan,
Ekberg Peter,
Leonardsson Lars,
Edgren Klas,
Sandström Torbjörn,
Stiblert Lars
Publication year - 2001
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1844659
Subject(s) - photomask , computer science , crts , lithography , process (computing) , compensation (psychology) , image quality , quality (philosophy) , artificial intelligence , computer graphics (images) , optics , materials science , image (mathematics) , psychology , philosophy , physics , epistemology , layer (electronics) , psychoanalysis , resist , composite material , operating system
— One of the most critical areas in the manufacturing process for FPD panels or shadow masks for CRTs is lithography. Most existing lithography technologies require high‐quality large‐area photomasks. The requirements on these photomasks include positioning accuracy (registration) and repeatability (overlay), systematic image quality errors (“mura” or display quality), and resolution (minimum feature size). The general trend toward higher resolution and improved performance, e.g. , for TFT desktop monitors, has put a strong focus on the specifications for large‐area‐display photomasks. This article intends to give an overview of the dominant issues for large‐area‐display photomasks, and illustrates differences compared with other applications. The article will also present state‐of‐the‐art methods and trends. In particular, the aspects of positioning accuracy over large areas and systematic image‐quality errors will be described. New qualitative and objective methods have been developed as means to capture systematic image‐quality errors. Results indicating that errors below 25 nm can be found early in the manufacturing process is presented, thus allowing inspection for visual effects before the actual display is completed. Positioning accuracy below 400 nm (3 sigma) over 720 × 560 mm have been achieved. These results will in the future be extended up toward 1 × 1 m for generation 4 in TFT‐LCD production.