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Microcrystalline‐silicon thin films by physical vapor deposition for wide‐area low‐temperature polysilicon production
Author(s) -
Demaray Ernest
Publication year - 2001
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1844653
Subject(s) - materials science , polycrystalline silicon , annealing (glass) , microcrystalline , thin film , optoelectronics , thin film transistor , silicon , chemical vapor deposition , microcrystalline silicon , composite material , nanotechnology , crystalline silicon , amorphous silicon , layer (electronics) , crystallography , chemistry
— A sputtered microcrystalline‐silicon thin film deposited on unannealed Corning Code 1737 glass has been shown to transform to polycrystalline material after excimer‐laser annealing at low energy densities, and below the full‐melt threshold. The homogeneous large‐grain polysilicon films obtained show promise for high‐yield manufacturing of large‐area LTPS displays. The material properties of the films will be presented and the properties of devices fabricated in the films will be discussed.