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The Influence of Gate Insulator Etching on the Characteristics of Mo Tip Field Emitter Arrays
Author(s) -
Kim Hoon,
Ju Byeong Kwon,
Lee SanJo,
Lee Yun Hi,
Ko Young Wook,
Jang Jin,
Oh Myung Hwan
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834177
Subject(s) - materials science , common emitter , etching (microfabrication) , optoelectronics , insulator (electricity) , field electron emission , dry etching , anode , reactive ion etching , isotropic etching , electric field , electron , nanotechnology , electrode , physics , layer (electronics) , quantum mechanics
Electron emission characteristics of field emitter arrays (FEAs) as etched shape of gate‐insulating opening were investigated by the measurement of anode and/or gate leakage current and voltage. In this study, we introduced a hybrid etching process, which etches the gate insulator wet and dry process sequentially. We also compared electron emission characteristics of FEAs as a function of etching process to form the gate‐insulating opening. The current density of field emitter arrays (FEAs) with new type of gate‐insulating opening is lower than that of FEAs with vertically etched shape of gate‐insulating opening. The electric field of FEAs made by hybrid process is higher than that of FEAs by using wet etching process to form the gate‐insulating opening. Thus, introduced hybrid‐etching process can optimize the gate‐insulating opening of FEAs.