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43.1: Invited Paper: Active‐Matrix Field‐Emitter Arrays for the Next‐Generation FEDs
Author(s) -
Itoh J.,
Kanemaru S.,
Matsukawa T.
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834175
Subject(s) - common emitter , field emitter array , mosfet , field (mathematics) , matrix (chemical analysis) , voltage , electronic circuit , active matrix , electrical engineering , engineering , electronic engineering , computer science , optoelectronics , materials science , physics , field electron emission , nanotechnology , transistor , mathematics , thin film transistor , quantum mechanics , layer (electronics) , pure mathematics , composite material , electron
A new field‐emitter‐array (FEA) was developed based on Si‐MOSFET technology. The FEA has a tri‐gate MOSFET structure with a microtip made just on the drain and is addressable in active‐matrix mode with low voltage signals. Its principle, performances and possibility for monolithic integration with various circuits such as memories and drivers will be presented.