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38.1: Optimized ITO Thin Films from ultra‐High‐Density Single‐Phase Targets
Author(s) -
Lupton D. F.
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834154
Subject(s) - materials science , sputtering , thin film , stoichiometry , conductance , optoelectronics , phase (matter) , nanotechnology , condensed matter physics , chemistry , physics , organic chemistry
Fundamental requirements of sputter targets are discussed with regard to the mechanisms of conductance and transmission in ITO films. A novel, fully integrated process for the manufacture of targets is described which ensures excellent, highly reproducible sputtering characteristics. The targets are characterized by ultra‐high, uniform density, and they are closely matched to the crystal structure, charge‐carrier density and oxygen stoichiometry of optimum ITO thin films.