Structure of a 320‐dpi 4‐inch a‐Si:H TFT Reflective Stacked Crossed Guest‐Host Display | Zendy

Takeda K. | Zendy; Hasegawa M. | Zendy; Sakaguchi Y. | Zendy; Taira Y. | Zendy; Egelhaaf J. | Zendy; Lueder E. | Zendy; Lowe A. C. | Zendy

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Structure of a 320‐dpi 4‐inch a‐Si:H TFT Reflective Stacked Crossed Guest‐Host Display

Author(s) -

Takeda K.,

Hasegawa M.,

Sakaguchi Y.,

Taira Y.,

Egelhaaf J.,

Lueder E.,

Lowe A. C.

Publication year - 1999

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.1834122

Subject(s) - thin film transistor , host (biology) , materials science , liquid crystal display , optoelectronics , computer graphics (images) , nanotechnology , computer science , layer (electronics) , ecology , biology

We have developed a 320‐dpi a‐Si:H TFT reflective stacked crossed guest‐host display, in which a thin polymer film is used to separate two orthogonally aligned nematic guest‐host liquid crystal layers, avoiding parallax and the need to drive the two layers independently. A newly designed pattern of photolithographically defined spacers that hold the thin film in a precise position and the assembly process for the stacked structure are described.

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