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The Investigation of Under‐twist Defect Near the Threshold in STN‐LCD
Author(s) -
Li Shuxin,
Bos Philip,
Roman James,
Judson Jon
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834105
Subject(s) - twist , materials science , liquid crystal display , key (lock) , crystallography , optoelectronics , chemistry , geometry , computer science , mathematics , computer security
Abstract We have investigated the under‐twist defect which occurs near the V th of a STN cell and analyzed key factors for the formation of this defect: surface alignment, d/p ratio, LC material parameters. Based on the investigation, we suggested approaches to avoid this defect.