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Electrical Properties of Interfaces and Turn‐on Characteristics of TFEL Devices
Author(s) -
Lee YunHi,
Shin KyeongSik,
Kim YoungSik,
Jang YoonTaek,
Sung ManYoung,
Ju ByeongKwon,
Oh MyungHwan
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834094
Subject(s) - materials science , optoelectronics , oxygen , plasma , insulator (electricity) , surface charge , voltage , chemistry , electrical engineering , physics , organic chemistry , quantum mechanics , engineering
A relationship between interface property of BaTa 2 O 6 (BTO) insulting later and operating characteristics of EL devices was experimentally examined. In order to obtain information on BTO. temperature‐dependent‐current characteristics of ITO‐BTO‐A1 has been investigated as a function of applied field for the both polarities. The turn‐on voltage for TFRL devoces was lowered by the introduction of oxygen plasma exposure for the BTO film as well as top surface of ZnS. Luminance‐transferred charge curves of TFELD revealed as more symmetric for the oxygen plasma treated device for both polarities. The experimental results suggest that via variation of surface of BTO via post‐treatment of top‐surface of lower insulator and top‐surface of ZnS.