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Influence of Minority Carrier Mobility on Organic Electroluminescent Device Characteristics
Author(s) -
Chen B. J.,
Lai W. Y.,
Gao Z. Q.,
Lee C. S.,
Lee S. T.,
Webb D. P.,
Chan Y. C.,
Gambling W. A.
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834085
Subject(s) - electroluminescence , electron mobility , materials science , optoelectronics , electron , silicon , deposition (geology) , aluminium , thin film , electric field , analytical chemistry (journal) , chemistry , nanotechnology , physics , paleontology , layer (electronics) , quantum mechanics , chromatography , sediment , biology , metallurgy
Abstract The drift mobility of electron in thin films of tris(8‐hydroxyquinolinolato) aluminum (Alq) deposited at different rates (0.2 nm/s, 0.4 nm/s and 0.7 nm/s) on silicon has been determined by the time‐of‐flight (TOF) technique. It has been found that the drift mobility of electron in Alq increased for about two orders of magnitude as the deposition rate decreased from 0.7 to 0.2 nm/s. Further, the electron drift mobility in all Alq samples increased linearly with the square root of the applied electric field. Electroluminescent devices with a structure of ITO / NPB(90 nm) / Alq(90 nm) / Mg:Ag were fabricated at different Alq deposition rates. The device efficiency was found to increase with increasing electron mobility in Alq. As electron is the minority carrier of the present device, an increase in electron mobility in Alq would thus lead to an increase in device efficiency.