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A Low Temperature Poly‐Si TFT with a SMC Poly‐Si Crystallized at 420 °C
Author(s) -
Choi Y. J.,
Kwak W. K.,
Park S. J.,
Yoon S. Y.,
Kim C. O.,
Jang J.
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834069
Subject(s) - thin film transistor , materials science , crystallization , amorphous solid , annealing (glass) , amorphous silicon , silicon nitride , silicon , silicide , nitride , optoelectronics , layer (electronics) , crystallography , nanotechnology , composite material , crystalline silicon , chemical engineering , chemistry , engineering
Amorphous silicon (a‐Si) was crystallized by silicide mediated crystallization (SMC) using a very thin metal layer on a‐Si. Such structure can be crystallized by annealing for 30 min at 420 °C in the presence of an electric field of 100 V/cm. The poly‐Si TFT was fabricated using a triple layers of SMC poly‐Si, silicon‐nitride (SiN x ), and a‐Si:H. The TFT exhibited a field effect mobility of 24 cm 2 /Vs and a threshold voltage of 1V, and an on/off current ratio of ∼10 5 . The SMC poly‐Si TFT is very suitable for the production of large‐area, high quality liquid crystal displays.