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Improved DC Reliability of Polysilicon Thin‐Film Transistors with Deuterium Plasma Treatment
Author(s) -
Tung YehJiun,
Huang Xuejue,
King TsuJae,
Boyce James,
Ho Jackson
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834042
Subject(s) - materials science , deuterium , passivation , thin film transistor , plasma , optoelectronics , reliability (semiconductor) , transistor , hydrogen , degradation (telecommunications) , nanotechnology , electrical engineering , atomic physics , chemistry , layer (electronics) , power (physics) , physics , engineering , organic chemistry , quantum mechanics , voltage
Abstract We demonstrate the improved reliability of high‐temperature (950°C) processed poly‐Si TFTs passivated in a deuterium plasma ambient. Deuterated TFTs exhibit better resistance to performance degradation under dc stress than hydrogenated TFTs. In particular, V T shift is substantially reduced for deuterated TFTs. Our results indicate that the simple substitution of deuterium gas for hydrogen gas in plasma passivation of poly‐Si TFTs can significantly improve device lifetime.