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27.4: Four‐Terminal Poly‐Si TFTs with Improved Reliability
Author(s) -
Park C.M.,
Jeon J.H.,
Yoo J.S.,
Han M.K.
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834041
Subject(s) - thin film transistor , reliability (semiconductor) , terminal (telecommunication) , materials science , optoelectronics , doping , stress (linguistics) , computer science , nanotechnology , telecommunications , physics , layer (electronics) , quantum mechanics , power (physics) , linguistics , philosophy
We fabricate a novel poly‐Si TFT, which employs counter‐doped lateral body terminal in order to suppress kink effects and improve the device stability. The device also employs buried channel, which increase ON‐current and operating frequency. The proposed poly‐Si TFT exhibits superb dynamic reliability to conventional poly‐Si TFT after AC stress.