Premium
27.2: Offset Metal‐Induced Unilaterally Crystallized Poly‐Si TFTs
Author(s) -
Meng Z.,
Wang M.,
Kwok H. S.,
Wong M.
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1834038
Subject(s) - materials science , thin film transistor , transistor , optoelectronics , offset (computer science) , grain boundary , electrical engineering , leakage (economics) , current (fluid) , voltage , composite material , computer science , microstructure , engineering , economics , macroeconomics , layer (electronics) , programming language
While low‐temperature thin film transistor with metal‐induced‐laterally‐crystallized (MILC) channels are better than their solid‐phase‐crystallized (SPC) counterparts in many device performance measures, they suffer from higher off‐state leakage current and lower drain breakdown voltage because of the self‐aligned metal‐induction‐crystallized (MIC) source and drain regions. A new technology that enables the removal of all major grain boundaries transverse to the drain current flow is presently proposed, resulting in devices with higher field‐effect mobility and significantly reduced leakage current, as well as much improved spatial uniformity of device parameters.