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Charging and reliability effects associated with FED spacers
Author(s) -
TirardGatel N.,
Perrin A.,
Lévy F.,
Boronnat J. F.
Publication year - 1999
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833970
Subject(s) - anode , reliability (semiconductor) , degradation (telecommunications) , materials science , scalability , reliability engineering , engineering physics , term (time) , high voltage , arc flash , voltage , computer science , optoelectronics , electrical engineering , nuclear engineering , composite material , engineering , chemistry , electrode , physics , power (physics) , thermodynamics , quantum mechanics , database
A low cost scalable spacer technology is required for the commercial development of medium and high voltage FED products. Various techniques can be used to shape glass into high aspect ratio spacers. In this paper, we will describe and interpret the short term effects associated with charging under electron bombardment, as well as the long term reliability effects such as flashover and image degradation, under 5 V / micron anode fields.