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A 4‐mask Process for an Ion Implanted 14″ a‐Si:H‐TFT‐Display with high Fabrication Yield
Author(s) -
Maier G.,
Maresch S.,
Sautter B.,
Kallfass T.,
Lueder E.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833929
Subject(s) - ion implantation , fabrication , materials science , etching (microfabrication) , thin film transistor , optoelectronics , silicon , yield (engineering) , doping , amorphous silicon , ion , nanotechnology , chemistry , crystalline silicon , metallurgy , medicine , alternative medicine , organic chemistry , pathology , layer (electronics)
We developed a 4‐mask manufacturing process for a‐Si:H‐TFT displays with improved reproducibility and yield. This process uses a standard etching stopper technology however the n‐doped amorphous silicon is prepared by ion implantation of phosphorus atoms through the metallic Drain and Source contacts. The performance of this process has been demonstrated by the fabrication of a 1.3″ Spatial Light Modulator with 480 × 480 pixels sized 50μm × 50μm and is now demonstrated by a 14″ color TV display with the PAL format of 575 × 696 × 3 pixels sized 140μm × 380μm. The ion implantation is performed with a modified 6″ implanter using a special implantation technique for the uniform doping of large areas.