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30.4: Short‐Channel Effect of Sub‐Micron Poly‐Si TFTs with Large Poly‐Si Grains
Author(s) -
Akimoto H.,
Hatano M.,
Sakai T.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833907
Subject(s) - materials science , thin film transistor , conductance , subthreshold conduction , threshold voltage , grain boundary , subthreshold slope , optoelectronics , transistor , channel (broadcasting) , field effect , voltage , condensed matter physics , electrical engineering , nanotechnology , composite material , physics , microstructure , layer (electronics) , engineering
To study 3 V‐driven LSI‐like TFTs, we fabricated high‐temperature n‐channel poly‐Si TFTs, some of which had a subthreshold slope of 90 mV/dec and an electron field mobility of 432 cm 2 /Vs, with submicron channel length and large poly‐Si grains. We only observed an anomalous parasitic bipolar transistor effect in the TFTs with good trans‐conductance, and concluded that the grain‐boundary affects the trans‐conductance severely than the threshold voltage and the subthreshold slope.