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P‐41: Improvement of Low‐Voltage Phosphors by Ar‐Gas Sputtering Treatments after Electron Bombardment: ZnS:Cu,Al and ZnGa 2 O 4 :Mn
Author(s) -
Jin Y. W.,
Jang J. E.,
Jung J. E.,
Ryu Y. S.,
Park Y. J.,
Cha S. N.,
Kim J. M.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833832
Subject(s) - phosphor , sputtering , materials science , irradiation , analytical chemistry (journal) , scanning electron microscope , electron beam processing , cathode ray , electron , optoelectronics , chemistry , thin film , nanotechnology , composite material , quantum mechanics , physics , chromatography , nuclear physics
Electrophoretically deposited low voltage phosphors of FED are irradiated by electron beam from the Spindt micro tip arrays. The conditions of phosphor surface are analyzed at various conditions. Ar gas treatment is used for stabilizing the surface of ZnS:Cu,Al and ZnGa 2 O 4 :Mn with improved conditions. It is found that the electron irradiation on the phosphor seriously causes carbon effect to the phosphor surface, resulting in dark color defects on the real 4 inch FED panel. However, the contaminated phosphor surface is effectively eliminated by the gas sputtering treatment on it, and proved experimentally.