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Electron Field Emission from a‐C:F:N Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
Author(s) -
Chung Suk Jae,
Han Eun Jung,
Moon Jong Hyun,
Oh Myung Hwan,
Jang Jin
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833829
Subject(s) - inductively coupled plasma , analytical chemistry (journal) , field electron emission , chemical vapor deposition , deposition (geology) , materials science , plasma , amorphous solid , doping , common emitter , chemistry , electron , nanotechnology , optoelectronics , physics , environmental chemistry , crystallography , paleontology , quantum mechanics , sediment , biology
Amorphous fluorocarbon (a‐C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N‐doped a‐C: F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The optimum doping concentration was found to be (N 2 )/(CF 4 ) = 9% in the gas phase. The turn‐on field and the emission current density at (N 2 )/(CF 4 ) = 9% were found to be 7.34 V/μm and 16 μA/cm 2 at 12.8 V/μm, respectively.