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P‐34: The Influence of Chemical Modification of the Surface of RGB Phosphors on Their Low‐Voltage CL Properties
Author(s) -
Bukesov S. A.,
Nikishin N. V.,
Dmitrienko A. O.,
Shmakov S. L.,
Kim J. M.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833825
Subject(s) - phosphor , surface modification , materials science , voltage , optoelectronics , electron , excited state , rgb color model , chemical engineering , nanotechnology , analytical chemistry (journal) , computer science , chemistry , electrical engineering , atomic physics , physics , engineering , environmental chemistry , quantum mechanics , operating system
The outlook of chemical modification of RGB phosphors excited by low‐energy (<1 keV) electrons with wide‐band oxides with the aim to improve their CL properties is considered. Basic experimental results of how modifying additives influence the electropbysical and low‐voltage CL properties of phosphors are presented. A mechanism of modifying action is proposed to explain the known data, some ways for searching surface modifiers are given to allow the quality of phosphors to be improved.