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P‐6: A1‐Nd‐Ti‐Alloy Films and Its Application to 6.7‐in. SVGA High‐Aperture a‐Si TFT‐LCDs
Author(s) -
Kamiya K.,
Shiota J.,
Ishii H.,
Miyashita T.,
Sato S.I.,
Aoki H.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833790
Subject(s) - materials science , differential scanning calorimetry , alloy , thin film transistor , electrical resistivity and conductivity , metallurgy , optoelectronics , composite material , layer (electronics) , electrical engineering , physics , thermodynamics , engineering
We have developed a 6.7inch diagonal SVGA TFT‐LCD device with new Al‐Nd‐Ti alloys films which had low electric resistivity (<10μΩ cm) for gate and drain electrodes as single layer. The alloys films have high performance of both heat tolerance and corrosion tolerance than conventional Al‐Ti and Al‐Nd alloys films. We also observed the mechanism of alloys films' properties change after heating with DSC (Differential Scanning Calorimetry)

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