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A High Performance Bi‐Directional Super‐MIM Diode with Symmetrical and Shift‐Free I‐V Characteristics
Author(s) -
Zhang Shengdong,
Sin Johnny K. O.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833788
Subject(s) - diode , materials science , fabrication , optoelectronics , insulator (electricity) , electrode , metal insulator metal , metal , electrical engineering , chemistry , voltage , medicine , alternative medicine , pathology , metallurgy , engineering , capacitor
A novel self‐aligned bi‐directional MIM (Metal ‐Insulator‐Metal) diode with transparent junctions is proposed and fabricated. The MIM diode is formed by a combination of Ta/TaO x /ITO/TaO x /Ta. In this structure, both symmetrical and shift‐free I‐V characteristics are obtained. The symmetrical I‐V characteristics are attributed to the excellent symmetry in the diode structure. The significant reduction on the shift in the I‐V characteristics is a result of the removal of the charges captured by the traps in the TaO x layers and at the interfaces between the TaO x and the electrodes during electrical stress. Only three masks are needed for the fabrication of the MIM diode pixel, which is as simple as the conventional approach. Moreover, the adoption of the lateral junction approach in the structure makes it possible to be used for high density MIM matrix implementation over large area substrates without the need of high resolution patterning techniques.