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Plasma Treatment Effect on the Off Current Characteristics of a‐Si TFT
Author(s) -
Yamakawa S.,
Yabuta S.,
Ban A.,
Okamoto M.,
Katayama M.,
Ishii Y.,
Hijikigawa M.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833787
Subject(s) - thin film transistor , passivation , materials science , plasma , subthreshold conduction , transistor , optoelectronics , plasma etching , etching (microfabrication) , layer (electronics) , electrical engineering , nanotechnology , physics , engineering , quantum mechanics , voltage
We have investigated the effect of plasma treatment after a back channel etching process of a‐Si:H thin film transistors (TFTs). O 2 , N 2 and He plasma treatments were done and compared. It was found that the He plasma treatment was the most effective method to decrease the off leakage current in the lower subthreshold region. The He plasma treatment affects the interface characteristics between the a‐Si:H layer and the passivation layer, and obstructs the electron transport near the back channel interface.