P‐1: The Application of Tetraethooxysilane (TEOS) Oxide to a‐Si:H TFTs as the Gate Insulator | Zendy

Lee J. K. | Zendy; Choi J. B. | Zendy; See S. M. | Zendy; Han C. W. | Zendy; Soh H. S. | Zendy

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P‐1: The Application of Tetraethooxysilane (TEOS) Oxide to a‐Si:H TFTs as the Gate Insulator

Author(s) -

Lee J. K.,

Choi J. B.,

See S. M.,

Han C. W.,

Soh H. S.

Publication year - 1998

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.1833785

Subject(s) - materials science , gate oxide , silicon on insulator , oxide , optoelectronics , thin film transistor , oxide thin film transistor , electrical engineering , nanotechnology , silicon , metallurgy , transistor , layer (electronics) , engineering , voltage

A bottom gate a‐Si:H thin film transistor (TFT) with tetraethooxysihme (TEOS) oxide as a gate insulator has been made for the first time. TEOS oxide film of 2000 Å has high breakdown strength as twice as the SiNx film of 2000 Å prepared by plasma enhanced chemical vapor deposition (PECVD). A proper thickness combination of SiNx / TEOS oxide double layer for the high production yield will be discussed. and the characteristics of a‐Si:H TFT fabricated with SiNx / TEOS oxide will be presented. The pixel charging properties and the Ωvalues of the SiNx / TEOS oxide double layered a‐Si:H TFT‐LCD will be compared with those Of the SiNx/Al 2 O 3 double layered a‐Si:H TFT‐LCD by panel simulation.

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