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P‐1: The Application of Tetraethooxysilane (TEOS) Oxide to a‐Si:H TFTs as the Gate Insulator
Author(s) -
Lee J. K.,
Choi J. B.,
See S. M.,
Han C. W.,
Soh H. S.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833785
Subject(s) - materials science , gate oxide , silicon on insulator , oxide , optoelectronics , thin film transistor , oxide thin film transistor , electrical engineering , nanotechnology , silicon , metallurgy , transistor , layer (electronics) , engineering , voltage
A bottom gate a‐Si:H thin film transistor (TFT) with tetraethooxysihme (TEOS) oxide as a gate insulator has been made for the first time. TEOS oxide film of 2000 Å has high breakdown strength as twice as the SiNx film of 2000 Å prepared by plasma enhanced chemical vapor deposition (PECVD). A proper thickness combination of SiNx / TEOS oxide double layer for the high production yield will be discussed. and the characteristics of a‐Si:H TFT fabricated with SiNx / TEOS oxide will be presented. The pixel charging properties and the Ωvalues of the SiNx / TEOS oxide double layered a‐Si:H TFT‐LCD will be compared with those Of the SiNx/Al 2 O 3 double layered a‐Si:H TFT‐LCD by panel simulation.