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14.2: Monolithic Integration of Poly‐Si FEA and TFT for Active‐Matrix FEDs
Author(s) -
Song Y.H.,
Lee J. H.,
Kang S.Y.,
Park J.M.,
Cho K. I.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833725
Subject(s) - thin film transistor , materials science , active matrix , finite element method , matrix (chemical analysis) , composite material , engineering , structural engineering , layer (electronics)
Abstract We present integration of polycrystalline silicon field emitter array (poly‐Si FEA) and thin‐film transistor (TFT) on an insulating substrate for active‐matrix field emission displays (AMFEDs). The TFT was designed to have low off‐state currents even though at a high drain voltage. The integrated poly‐Si TFT controlled electron emissions of the poly‐Si FEA actively, resulting in great improvement in the emission reliability along with a low‐voltage control, below 15 V, of field emission. The developed technology has potential applications in AMFEDs on glass substrates.