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4.2: Design ofanlmproved Pixel fora Polysilicon Active‐Matrix Organic LED Display
Author(s) -
Dawson R. M. A.,
Shen Z.,
Furst D. A.,
Connor S.,
Hsu J.,
Kane M. G.,
Stewart R. G.,
Ipri A.,
King C. N.,
Green P. J.,
Flegal R. Y.,
Pearson S.,
Barrow W. A.,
Dickey E.,
Ping K.,
Tang C. W.,
Slyke S.,
Chen F.,
Shi J.,
Sturm J. C.,
Lu M. H.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833705
Subject(s) - amoled , active matrix , oled , pixel , materials science , brightness , luminance , threshold voltage , optoelectronics , transistor , thin film transistor , diode , voltage , electrical engineering , computer science , optics , physics , engineering , artificial intelligence , nanotechnology , layer (electronics)
A polysilicon transistor based active matrix organic light emitting diode (AMOLED) pixel with high pixel to pixel luminance uniformity is reported. The new pixel powers the OLEDS with small constant currents to ensure consistent brightness and extended life. Excellent pixel to pixel current drive uniformity is obtained despite the threshold voltage variation inherent in polysilicon transistors. considerations in the design for high information content displays are discussed.