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47.2: Invited Paper: TFT Application of Low‐Temperature Deposited Cat‐CVD Polysilicon Films
Author(s) -
Matsumura H.
Publication year - 1998
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833702
Subject(s) - materials science , polycrystalline silicon , chemical vapor deposition , thin film transistor , tungsten , amorphous silicon , amorphous solid , silicon , optoelectronics , thin film , crystallite , chemical engineering , nanotechnology , composite material , metallurgy , crystalline silicon , crystallography , chemistry , layer (electronics) , engineering
Cat‐CVD (Catalytic Chemical Vapor Deposition), often called “Hot‐Wire CVD”, is a new method to obtain device quality thin films. In the method, SiH 4 and H 2 gases are decomposed by the catalytic cracking reactions with heated tungsten catalyzer placed near substrates, and thus, amorphous silicon (a‐Si) or polycrystalline silicon (poly‐Si) films can be deposited at temperatures lower than 400° without using plasma. It is found that the structural properties are almost equivalent to those of laser annealed poly‐Si films and that Cat‐CVD poly‐Si is a promising material for high mobility TFT.