Premium
P‐17: Characteristics of Poly‐Si TFTs Employing “Counter‐Doped Body Tied Source” for Kink Suppression
Author(s) -
Kim Ji Hoon,
Nam WooJin,
Song InHyuk,
Park JungHyun,
Han MinKoo
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833171
Subject(s) - doping , materials science , optoelectronics , current (fluid) , thin film transistor , electrical engineering , nanotechnology , engineering , layer (electronics)
A new poly‐Si TFTs employing “Counter‐doped Body Tied Source (BTS)” have been proposed and fabricated in order to suppress the kink current. In our experiment, the proposed TFTs employing counter doped BTS show that the kink current due to hole accumulation under high drain electrical field is reduced considerably. The capability of hole collection improved as the width of counter doped region increase.