Premium
36.3: High Quality Poly‐Si Crystallized at 400 °C by Field Enhanced SMC
Author(s) -
Yoon Soo Young,
Cho Kyu Sik,
Park Seong Jin,
Cho Bong Rae,
Kim Kyung Ho,
Kwak Won Kyu,
Jang Jin
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833105
Subject(s) - crystallization , crystallite , materials science , electric field , thin film transistor , polycrystalline silicon , layer (electronics) , chemical engineering , composite material , metallurgy , physics , quantum mechanics , engineering
A‐Si layer was crystallized at a temperature of 400 °C in the presence of a modest electric field of 100 V/cm. An accumulation of needlelike crystallites in the crystallized poly‐Si has been found after crystallization. This results from the migration of NiSi 2 precipitates through a‐Si. The field effect mobility and threshold voltage for a SMC poly‐Si TFT using a maximum process temperature of 400 °C were 76 cm 2 /Vs and 0.8 V, respectively. The performance of a SMC poly‐Si TFT is comparable to that of an ELA poly‐Si TFT.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom