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36.3: High Quality Poly‐Si Crystallized at 400 °C by Field Enhanced SMC
Author(s) -
Yoon Soo Young,
Cho Kyu Sik,
Park Seong Jin,
Cho Bong Rae,
Kim Kyung Ho,
Kwak Won Kyu,
Jang Jin
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833105
Subject(s) - crystallization , crystallite , materials science , electric field , thin film transistor , polycrystalline silicon , layer (electronics) , chemical engineering , composite material , metallurgy , physics , quantum mechanics , engineering
A‐Si layer was crystallized at a temperature of 400 °C in the presence of a modest electric field of 100 V/cm. An accumulation of needlelike crystallites in the crystallized poly‐Si has been found after crystallization. This results from the migration of NiSi 2 precipitates through a‐Si. The field effect mobility and threshold voltage for a SMC poly‐Si TFT using a maximum process temperature of 400 °C were 76 cm 2 /Vs and 0.8 V, respectively. The performance of a SMC poly‐Si TFT is comparable to that of an ELA poly‐Si TFT.