36.2: Low Temperature Poly‐Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing (SUFTLA™) | Zendy

Utsunomiya S. | Zendy; Inoue S. | Zendy; Shimoda T. | Zendy

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36.2: Low Temperature Poly‐Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing (SUFTLA™)

Author(s) -

Utsunomiya S.,

Inoue S.,

Shimoda T.

Publication year - 2000

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.1833104

Subject(s) - materials science , thin film transistor , annealing (glass) , optoelectronics , laser ablation , substrate (aquarium) , laser , composite material , optics , oceanography , physics , layer (electronics) , geology

A novel technology that makes it possible to transfer thin film devices from an original substrate to another by using laser ablation/annealing has been investigated. Low‐temperature poly‐Si TFTs firstly fabricated on quartz or glass substrates can be transferred onto plastic substrates without any degradation. By using this technique, a trial TFT‐LCD device was successfully transferred onto a plastic substrate and the operation of its driver circuits was confirmed.

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