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P‐34: Cu Doping of Atomic Layer Epitaxy SrS via a Rapid Thermal Anneal Process
Author(s) -
Baukol B. A.,
Wager J. F.,
Moehnke S.
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833033
Subject(s) - atomic layer epitaxy , dopant , materials science , doping , annealing (glass) , thin film , electroluminescence , phosphor , optoelectronics , epitaxy , layer (electronics) , dopant activation , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , chromatography
A process for Cu doping of atomic layer epitaxy (ALE) deposited SrS for thin‐film electroluminescent devices is presented. The process involves the evaporation of dopant‐containing material onto undoped ALE SrS thin films and rapid thermal annealing of the films. Green SrS:Cu, Na, greenish‐blue SrS: Cu, Cl, and blue SrS: Cu, Ag, Cl phosphors are prepared using this processing methodology.