Premium
P‐33: Effect of Rapid Thermal Annealing on CaS:Pb Electroluminescent Devices Containing Ta 2 O 5 as Insulating Layer
Author(s) -
Park SangHee Ko,
Kim Yong Shin,
Kang JungSook,
Yun Sun Jin
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1833032
Subject(s) - electroluminescence , annealing (glass) , materials science , dielectric , luminescence , dielectric strength , analytical chemistry (journal) , optoelectronics , insulator (electricity) , thermal , layer (electronics) , nanotechnology , chemistry , composite material , physics , meteorology , chromatography
The effect of rapid thermal annealing (RTA) on the CaS:Pb electroluminescent device containing Ta 2 O 5 as lower insulator has been investigated. RTA greatly improved characteristics of dielectric Ta 2 O 5 layer such as dielectric strength and leakage current to enhance luminescent characteristics of EL device.