Premium
P‐3: The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly‐Si Films
Author(s) -
Suga Katsuyuki,
Chida Mitsuru,
Mishima Yasuyoshi,
Hara Akito,
Sasaki Nobuo
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832998
Subject(s) - materials science , surface roughness , thin film transistor , annealing (glass) , excimer laser , surface finish , irradiation , oxide , laser , oxygen , grain size , thin film , morphology (biology) , composite material , optics , nanotechnology , metallurgy , chemistry , layer (electronics) , physics , organic chemistry , biology , nuclear physics , genetics
We have examined the effect of a laser annealing ambient on the morphology and TFT performance of poly‐Si films. Oxygen in the ambient prevents the relaxation of surface roughness because of a thin oxide formed on the poly‐Si surface during laser irradiation. Poly‐Si films that crystallize in air (oxygen ambient) have larger gains, higher mobility, and rougher surfaces than films crystallized in a vacuum. To reduce this surface roughness, the surface oxide that formed during laser irradiation in air was removed and poly‐Si films were irradiated by the excimer laser in a vacuum again. The surface roughness drastically decreased from 13 nm to 1 nm while the grain size remained the same.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom