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P‐3: The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly‐Si Films
Author(s) -
Suga Katsuyuki,
Chida Mitsuru,
Mishima Yasuyoshi,
Hara Akito,
Sasaki Nobuo
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832998
Subject(s) - materials science , surface roughness , thin film transistor , annealing (glass) , excimer laser , surface finish , irradiation , oxide , laser , oxygen , grain size , thin film , morphology (biology) , composite material , optics , nanotechnology , metallurgy , chemistry , layer (electronics) , physics , organic chemistry , biology , nuclear physics , genetics
Abstract We have examined the effect of a laser annealing ambient on the morphology and TFT performance of poly‐Si films. Oxygen in the ambient prevents the relaxation of surface roughness because of a thin oxide formed on the poly‐Si surface during laser irradiation. Poly‐Si films that crystallize in air (oxygen ambient) have larger gains, higher mobility, and rougher surfaces than films crystallized in a vacuum. To reduce this surface roughness, the surface oxide that formed during laser irradiation in air was removed and poly‐Si films were irradiated by the excimer laser in a vacuum again. The surface roughness drastically decreased from 13 nm to 1 nm while the grain size remained the same.