Premium
P‐2: Re‐Crystallized Metal‐Induced Laterally Crystallized Polycrystalline Silicon for System‐on‐Panel Applications
Author(s) -
Meng Zhiguo,
Wang Mingxiang,
Kwok Hoi S.,
Wong Man
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832997
Subject(s) - materials science , polycrystalline silicon , crystallization , silicon , optoelectronics , crystallite , thin film transistor , recrystallization (geology) , leakage (economics) , nanotechnology , metallurgy , engineering , chemical engineering , paleontology , macroeconomics , layer (electronics) , economics , biology
Metal‐induced lateral crystallization (MILC) has been promoted as an enabling polycrystalline silicon (poly‐Si) technology for system‐on‐panel (SOP) applications. It is reported presently that the recrystallization of MILC poly‐Si leads to significant improvement in material characteristics and device performance. Re‐crystallized metal‐induced unilaterally crystallized (RC‐MIUC) poly‐Si thin film transistors exhibit high mobility, low threshold voltage, steep sub‐threshold slope and low gate‐induced drain‐leakage, thus making them applicable to realizing high performance 3‐dimensional integrated circuits and SOPs.