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24.4: Investigation of Hot Carrier Degradation Due to AC Stress in Low Temperature Poly‐Si TFTs
Author(s) -
Inoue Satoshi,
Kimura Mutsumi,
Shimoda Tatsuya
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832958
Subject(s) - degradation (telecommunications) , materials science , stress (linguistics) , composite material , optoelectronics , electronic engineering , philosophy , linguistics , engineering
We investigated the hot carrier degradation due to AC stress in low temperature poly‐Si TFTs. The degradation due to the AC stress is larger compared with that due to DC stress. We found that the pulse‐number in AC stress dominated this degradation.