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48.3: Invited Paper : P‐type Technology for Large Size Low Temperature Poly‐Si TFT‐LCDs
Author(s) -
Ha YongMin
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832861
Subject(s) - thin film transistor , power consumption , reliability (semiconductor) , electronic circuit , materials science , electrical engineering , power (physics) , optoelectronics , automotive engineering , engineering , nanotechnology , physics , layer (electronics) , quantum mechanics
The fabrication process of low temperature poly‐Si (LTPS) TFT can be simplified by p‐type technology. It is expected that the cost and the yield of LTPS will be improved. Both integrated driving circuits and pixel switches consist of p‐type TFTs. The characteristics of the panel, the power consumption in the driving circuit, and the reliability of the panel are investigated. The driving circuits are designed to have large immunity to the variation of TFT characteristics and to operate with low power consumption. It is shown that the long life time of panel is guaranteed by acceleration experiments. 10.4 XGA and 12.1 XGA panels have been fabricated and characterized.