Premium
42.2: Four Photolithography Process Amorphous‐Silicon Thin‐Film Transistor Array
Author(s) -
Chen PiFu,
Chen JrHong,
Chen DouI,
Sung HsixgJu,
Hwang JuneWei,
Lu IMin
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832834
Subject(s) - photolithography , thin film transistor , amorphous silicon , materials science , optoelectronics , amorphous solid , silicon , transistor , oxide thin film transistor , process (computing) , nanotechnology , electrical engineering , computer science , engineering , crystalline silicon , chemistry , layer (electronics) , crystallography , voltage , operating system
The amorphous silicon thin film transistors (TFTs) with four‐photolithography process have been developed and studied. And a two‐step‐exposure (TSE) technology has been developed in application for process reduction. The result shows that a‐Si TFT with four‐photolithography process has great potential in mass production.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom