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42.2: Four Photolithography Process Amorphous‐Silicon Thin‐Film Transistor Array
Author(s) -
Chen PiFu,
Chen JrHong,
Chen DouI,
Sung HsixgJu,
Hwang JuneWei,
Lu IMin
Publication year - 2000
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832834
Subject(s) - photolithography , thin film transistor , amorphous silicon , materials science , optoelectronics , amorphous solid , silicon , transistor , oxide thin film transistor , process (computing) , nanotechnology , electrical engineering , computer science , engineering , crystalline silicon , chemistry , layer (electronics) , crystallography , voltage , operating system
The amorphous silicon thin film transistors (TFTs) with four‐photolithography process have been developed and studied. And a two‐step‐exposure (TSE) technology has been developed in application for process reduction. The result shows that a‐Si TFT with four‐photolithography process has great potential in mass production.