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57.2: Fabrication of High‐Transmittance TFT‐LCD Panels Using Low‐k CVD Films
Author(s) -
Hong WanShick,
Jung KwanWook,
Yang SungHoon,
Chung Kyuha,
Hwang ByungKeun,
Cerny Glenn
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832571
Subject(s) - thin film transistor , passivation , materials science , transmittance , optoelectronics , fabrication , dielectric , plasma enhanced chemical vapor deposition , layer (electronics) , liquid crystal display , etching (microfabrication) , chemical vapor deposition , nanotechnology , medicine , alternative medicine , pathology
Fabrication of TFT‐LCD panels of high resolution and aperture ratio was demonstrated by using a low‐k dielectric film as a passivation layer for the first time. The low‐k dielectric films were successfully deposited and patterned using a conventional PECVD and plasma‐assisted etching techniques, causing no drastic modification to the standard TFT process. Thin film transistors having the a‐Si:C:O:H passivation showed a transfer characteristics similar to that of conventional TFT's. The high transmittance panel showed brightness approximately 30% higher than that of a standard panel without degrading other display characteristics, such as cross‐talk.