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57.1: Invited Paper: Present Status of Cat‐CVD as a New Fabrication Technology for Large Area Display
Author(s) -
Matsumura Hideki,
Masuda Atsushi,
Izumi Akira
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832570
Subject(s) - thin film transistor , fabrication , materials science , plasma enhanced chemical vapor deposition , chemical vapor deposition , optoelectronics , deposition (geology) , transistor , nanotechnology , electrical engineering , engineering , voltage , layer (electronics) , medicine , paleontology , alternative medicine , pathology , sediment , biology
Present status of Cat‐CVD (Hot‐Wire CVD) technology is summarized as a new fabrication tool of thin film transistor (TFT). It is demonstrated that the efficiency of gas use is much higher than that of PECVD, the large area deposition is realized, Cat‐CVD a‐ Si TFT can operate stably under current stress and that the mobility of Cat‐CVD poly‐Si TFT reaches to several tens cm 2 /Vs.