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46.4: Oblique Incidence Excimer Laser Annealed (OI‐ELA) Poly‐Si TFTs for Eliminating Residual Source/Drain Junction Defects
Author(s) -
Nam WooJin,
Park KeeChan,
Shin HeeSun,
Han MinKoo
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832528
Subject(s) - materials science , excimer laser , optoelectronics , laser , annealing (glass) , diffraction , electrode , optics , composite material , chemistry , physics
We report residual ion implantation damage at source/drain junctions of self‐aligned, excimer‐laser‐annealed poly‐Si TFTs. The laser irradiation intensity decreased remarkably at the junction due to diffraction of laser beam at gate electrode edge. We eliminated the junction defects by oblique‐incidence excimer laser annealing and improved the characteristics of poly‐Si TFTs.