46.3: High Performance Dual‐Gate and Multi Channel Poly‐Si TFTs fabricated by XeCl Excimer Laser Annealing on Selectively Floating a‐Si Thin Film | Zendy

Song I. H. | Zendy; Kang S. H. | Zendy; Kim J. H. | Zendy; Han M. K. | Zendy

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46.3: High Performance Dual‐Gate and Multi Channel Poly‐Si TFTs fabricated by XeCl Excimer Laser Annealing on Selectively Floating a‐Si Thin Film

Author(s) -

Song I. H.,

Kang S. H.,

Kim J. H.,

Han M. K.

Publication year - 2003

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.1832527

Subject(s) - thin film transistor , materials science , optoelectronics , annealing (glass) , excimer laser , subthreshold conduction , channel (broadcasting) , laser , nanotechnology , electrical engineering , transistor , optics , composite material , voltage , layer (electronics) , physics , engineering

A high performance poly‐Si TFTs is fabricated by a new ELA method which employs floating a‐Si thin film structure and the effect of pre‐patterning. The proposed poly‐Si TFT exhibits high performance electrical characteristics which are high mobility of 504cm 2 /Vsec and low subthreshold slope of 0.337 V/dec.

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