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46.3: High Performance Dual‐Gate and Multi Channel Poly‐Si TFTs fabricated by XeCl Excimer Laser Annealing on Selectively Floating a‐Si Thin Film
Author(s) -
Song I. H.,
Kang S. H.,
Kim J. H.,
Han M. K.
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832527
Subject(s) - thin film transistor , materials science , optoelectronics , annealing (glass) , excimer laser , subthreshold conduction , channel (broadcasting) , laser , nanotechnology , electrical engineering , transistor , optics , composite material , voltage , layer (electronics) , physics , engineering
Abstract A high performance poly‐Si TFTs is fabricated by a new ELA method which employs floating a‐Si thin film structure and the effect of pre‐patterning. The proposed poly‐Si TFT exhibits high performance electrical characteristics which are high mobility of 504cm 2 /Vsec and low subthreshold slope of 0.337 V/dec.