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34.4: Invited Paper: Microcrystalline Silicon: An emerging Material for Stable Thin Film Transistors
Author(s) -
Cabarrocas P. Roca,
Kasouit S.,
Kalache B.,
Vanderhaghen R.,
Bonnassieux Y.,
Elyaakoubi M.,
French I.
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832479
Subject(s) - thin film transistor , materials science , microcrystalline , optoelectronics , silane , transistor , layer (electronics) , silicon , glow discharge , dielectric , gate dielectric , electrical engineering , nanotechnology , plasma , composite material , engineering , voltage , chemistry , crystallography , physics , quantum mechanics
Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer‐by‐layer technique, and the use of SiF 4 ‐Ar‐H 2 feedstock. In all cases, stable top gate TFT with mobility values around 1 cm 2 /V.s have been achieved, making them suitable for basic circuit on glass applications. Moreover, the use of SiF 4 gas combined with specific treatments of the a‐SiN:H dielectric in bottom gate TFTs, fully compatible with today's a‐Si:H production facilities, lead to an enhancement of the mobility which reaches stable values around 3 cm 2 /V.s.
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