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34.2: PMMA Buffer‐Layer Effects on Electrical Performance of Pentacene OTFTs with a Cross‐linked PVA Gate Insulator on a Flexible Substrate
Author(s) -
Jin S. H.,
Yu J. S.,
Kim J. W.,
Lee C. A.,
Park B.G.,
Lee J. D.,
Lee J. H.
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832477
Subject(s) - materials science , buffer (optical fiber) , pentacene , layer (electronics) , optoelectronics , substrate (aquarium) , threshold voltage , insulator (electricity) , thin film transistor , coating , subthreshold slope , voltage , composite material , transistor , electrical engineering , oceanography , geology , engineering
In this paper we proposed for the first time a technique of poly‐methylmethacrylate (PMMA) buffer layer insertion to overcome unsaturated output characteristics of OTFTs with cross‐linked poly‐vinylalcohol (PVA) gate insulators on a PET substrate. A 3:1 diluted PMMA buffer layer insertion resulted in saturated output characteristics and small shift of a threshold voltage in successive I‐V measurements for OTFTs due to the enhancement of surface hydrophobicity on the gate insulator. The electrical performances of a threshold voltage, a subthreshold slope and on‐off current ratio have been noticeably improved after PMMA buffer layers insertion. To our best knowledge, the highest mobility of 0.32 cm 2 /Vsec has been obtained among OTFTs fabricated with polymer gate insulators by spin coating processes on a PET substrate.
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